Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current

摘要

We propose a Heterojunction Vertical Tunneling FET and show usingself-consistent ballistic quantum transport simulations that it can providevery steep subthreshold swings and high ON current, thereby improving thescalability of Tunnel FETs for high performance. The turn-on in pocket regionof the device is dictated by modulation of heterojunction barrier height. Thesteepness of turn-on is increased because of simultaneous onset of tunneling inthe pocket and the region underneath and also due to contribution to current byvertical tunneling in the pocket. These factors can be engineered by tuningheterojunction band offsets.